View IXTM75N10_66465.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

MegaMOSTMFET
IXTH / IXTM 67N10 IXTH / IXTM 75N10 N-Channel Enhancement Mode
VDSS 100 V 100 V
ID25
RDS(on)
67 A 25 m 75 A 20 m
Symbol VDSS VDGR VGS VGSM ID25 IDM PD TJ TJM T stg Md Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C 67N10 75N10 67N10 75N10
Maximum Ratings 100 100 20 30 67 75 268 300 300 -55 ... +150 150 -55 ... +150 V V V V A A A A W C C C
TO-247 AD (IXTH)
D (TAB)
TO-204 AE (IXTM)
D G = Gate, S = Source,
G
D = Drain, TAB = Drain
Mounting torque
1.13/10 Nm/lb.in. TO-204 = 18 g, TO-247 = 6 g 300 C Features International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Low package inductance (< 5 nH) - easy to drive and to protect Fast switching times
l
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s
Symbol
Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 100 2 4 100 TJ = 25C TJ = 125C 200 1 0.025 0.020 V
Applications Switch-mode and resonant-mode power supplies Motor controls Uninterruptible Power Supplies (UPS) DC choppers
l
VDSS VGS(th) IGSS IDSS R DS(on)
VGS = 0 V, ID = 250 A VDS = VGS, ID = 250 A VGS = 20 VDC, VDS = 0 VDS = 0.8 * VDSS VGS = 0 V VGS = 10 V, ID = 0.5 ID25
nA A mA
Advantages Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) Space savings High power density
l
IXYS reserves the right to change limits, test conditions, and dimensions.
(c) 2000 IXYS All rights reserved
l
l
67N10 75N10 Pulse test, t 300 s, duty cycle d 2 %
l
V
l l l l l l
91533E(5/96)
1-4
IXTH 67N10 IXTM 67N10
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 25 30 4500 VGS = 0 V, VDS = 25 V, f = 1 MHz 1300 550 40 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 ID25 RG = 2 , (External) 60 100 30 180 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 ID25 30 90 60 110 140 60 260 70 160 0.42 0.25 S pF pF pF ns ns ns ns nC nC nC K/W K/W
1
IXTH 75N10 IXTM 75N10
TO-247 AD (IXTH) Outline
gfs C iss C oss C rss t d(on) tr td(off) tf Q g(on) Q gs Q gd R thJC R thCK
VDS = 10 V; ID = 0.5 ID25, pulse test
2
3
Terminals: 1 - Gate 3 - Source
2 - Drain Tab - Drain
Dim.
Source-Drain Diode Symbol IS ISM VSD t rr Test Conditions VGS = 0 V Repetitive; pulse width limited by TJM
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 67N10 75N10 67N10 75N10 67 75 268 300 1.75 300 A A A A V ns
Millimeter Inches Min. Max. Min. Max. A 4.7 5.3 .185 .209 A1 2.2 2.54 .087 .102 A2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b1 1.65 2.13 .065 .084 b2 2.87 3.12 .113 .123 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC
TO-204AE (IXTM) Outline
IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = IS, -di/dt = 100 A/s, VR = 100 V
Pins
1 - Gate 2 - Source Case - Drain
Dim. A A1 b D e e1
Millimeter Min. Max. 6.4 11.4 1.53 3.42 1.45 1.60 22.22 10.67 11.17 5.21 5.71
Inches Min. Max. .250 .450 .060 .135 .057 .063 .875 .420 .440 .205 .225 .440 .151 .151 1.187 .495 .131 .655 .480 .165 .165 BSC .525 .188 .675
L 11.18 12.19 p 3.84 4.19 p 1 3.84 4.19 q 30.15 BSC R 12.58 13.33 R1 3.33 4.77 s 16.64 17.14
(c) 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-4
IXTH 67N10 IXTM 67N10
IXTH 75N10 IXTM 75N10
Fig. 1 Output Characteristics
200
TJ = 25C VGS = 10V 9V
Fig. 2 Input Admittance
150 125
150
ID - Amperes
8V
ID - Amperes
100 75 50 25 0 0 1 2 3 4 5 6 7 8 9 10
TJ = 125C
100
7V 6V
50
0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
5V
TJ = 25C
VDS - Volts
VGS - Volts
Fig. 3 RDS(on) vs. Drain Current
1.4
TJ = 25C
Fig. 4 Temperature Dependence of Drain to Source Resistance
2.50 2.25
1.3
RDS(on) - Normalized
RDS(on) - Normalized
2.00 1.75 1.50
ID = 37.5A
1.2
VGS = 10V
1.1 1.0
VGS = 15V
1.25 1.00 0.75
0.9 0.8 0 20 40 60 80 100 120 140 160
0.50 -50
-25
0
25
50
75
100 125 150
ID - Amperes
TJ - Degrees C
Fig. 5 Drain Current vs. Case Temperature
80
75N10 67N10
Fig. 6 Temperature Dependence of Breakdown and Threshold Voltage
1.2 1.1
VGS(th) BVDSS
60
BV/VG(th) - Normalized
50 75 100 125 150
ID - Amperes
1.0 0.9 0.8 0.7 0.6
40
20
0 -50
-25
0
25
0.5 -50
-25
0
25
50
75
100 125 150
TC - Degrees C
TJ - Degrees C
(c) 2000 IXYS All rights reserved
3-4
IXTH 67N10 IXTM 67N10
IXTH 75N10 IXTM 75N10
Fig.7 Gate Charge Characteristic Curve
10 9 8 7
VDS = 50V ID = 37.5A IG = 1mA
Fig.8 Forward Bias Safe Operating Area
10s 100s
Limited by RDS(on)
100
6 5 4 3 2 1 0 0 25 50 75 100 125 150 175 200
ID - Amperes
VGS - Volts
1ms
10
10ms 100ms
1 1 10 100
Gate Charge - nCoulombs
VDS - Volts
Fig.9 Capacitance Curves
6000 5000
Fig.10 Source Current vs. Source to Drain Voltage
150 125
Capacitance - pF
3000 2000 1000 0 0 5
f = 1MHz VDS = 25V Coss
IS - Amperes
4000
Ciss
100 75 50
TJ = 125C
25
Crss
TJ = 25C
10
15
20
25
0 0.00
0.25
0.50
0.75
1.00
1.25
1.50
VDS - Volts
VSD - Volt
Fig.11 Transient Thermal Impedance
Thermal Response - K/W
D=0.5
0.1
D=0.2 D=0.1 D=0.05
0.01 D=0.02
D=0.01 Single pulse
0.001 0.00001
0.0001
0.001
0.01
0.1
1
10
Time - Seconds
(c) 2000 IXYS All rights reserved
4-4

▲Up To Search▲

Price & Availability of IXTM75N10

	To Download IXTM75N10 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .